Abstract
Sulfur-doped titanium dioxide (TiO2) films have been deposited on α-Al2O3(0001) and Si(100) substrates by pulsed laser deposition (PLD). To investigate growth condition of sulfur-doped TiO2 films, the various concentration of sulfur in titanium dioxide targets was prepared by annealing titanium disulfide (TiS2) in air up to 400°C. The crystal structure of films and the concentration of doped sulfur were assessed by X-ray diffraction (XRD) and Rutherford backscattering spectroscopy with channeling (RBS/C). It was found that the concentration of sulfur in rutile TiO2 films was mainly influenced by the substrate temperature. Rutile TiO2(100) films contained a few atomic percent sulfur were obtained on α-Al2O3(0001) at 400°C substrate temperature using an annealed titanium disulfide target. RBS/C analysis showed that doped sulfur atoms in rutile TiO2(100) films were distributed randomly.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
