Abstract
We investigated properties of sputtered nanocrystalline gallium nitride (nc-GaN) to discuss the potential of the nc-GaN as an electron selective contact in a silicon heterojunction (SHJ) solar cell. Modeling of nc-GaN/crystalline silicon (c-Si) heterojunction was carried out based on the analysis of the deposited nc-GaN films and nc-GaN/c-Si heterojunction devices. The simulation using the developed model well reproduced the current-voltage characteristics of a SHJ solar cell with nc-GaN layer. The device simulation pointed out that it is important to use nc-GaN with electron concentration larger than 5 × 1018 cm−3 and metal contact with work function less than 3.9 eV to obtain good solar cell performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.