Abstract
Vibrational spectroscopy (HREELS) in conjunction with atomic hydrogen as a marker may be used for the characterization of differently prepared semiconductur surfaces. First reaction steps of Si with atomic hydrogen show passivation of dangling bonds and depletion of surface states. From the well separated stretching mode intensities of Ge- and Si-hydrides, we are able to estimate the surface concentration of Ge- and Si-atoms at Ge/Si-alloys. For InP, direct evidence is given for the cation (anion) being the active site of adsorption at a cleaved (sputtered) surface. As a second step, bond breaking of substrate surface atoms follows. At higher exposures, corrosion is observed. From the measurement of chemical shifts of vibrational H-stretching modes also the identification of different oxidation stages after catalytic reactions with alkali atoms (cesium) is possible.
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