Abstract
Magnetron sputtering sources are often used with radiofrequency excitation instead of dc excitation to sputter deposit insulating materials; such excitation alters the ion bombarding properties of the magnetron, generally increasing the flux of ions arriving at the substrate position. This study looks at the dc ion flux and self-bias voltage generated at the substrate for balanced and unbalanced magnetron designs (using copper targets) with either dc or rf excitation at comparable powers. The dc bias on the cathode (applied in the case of dc excitation and generated in the case of rf excitation) is also measured. These quantities are studied as functions of inert gas pressure and magnet design. The magnitude of the rf plasma potential is estimated using the lattice strains produced in deposited chromium films to quantify the degree of ion assistance to be +20 to +50 V.
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