Abstract
BFO film was fabricated on ZrO2 insulating buffer by sol-gel method. The ZrO2 was deposit on Si substrate by liquid delivery metal-organic chemical vapor deposition (LD-MOCVD) process. The microstructure and the electric properties of the Pt/BFO/ZrO2/Si capacitors were studied. ZrO2 demonstrates excellent insulating properties on Si substrate. The MFIS structure showed clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of BFO. The maximum memory window is 2.26V. The leakage current density of the capacitor was of the order of 10−7 A/cm2 at an applied voltage of 8V.
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