Abstract
A new gate-insulating film consisting of phosphorus oxinitride (PON) was formed on an ( n)InP surface by vapour transport technique. The substrate temperature was in the range of 280–350°C. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The interfacial properties of phosphorus oxinitride/( n)InP metal-insulator-semiconductor were investigated. The minimum value of the interface states density distribution ( D it), evaluated from high-frequency capacitance-voltage ( C-V) measurement was 1.2 × 10 11 eV −1 cm −2 at about 0.48 eV below the conduction band edge of Inp.
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