Abstract
ABSTRACT For high-density FRAM application, we found novel electrodes of IrTi family having a sufficiently low resistance. In addition, IrTi show good adhesion and better surface roughness than Ir. From FWHM results, PZT crystallinity is improved by applying IrTi. IrTi enhanced PZT capacitor properties of Fatigue and Retention. In 60 nm PZT, IrTi and IrTiOx/IrTi bottom electrode were effected increasing remnant polarization of 37 uC/cm2 and 47 uC/cm2 at 1.8 V. We successfully adopted IrTi family bottom electrode for making ultra thin PZT:40 nm PZT have good electric results such as [2Pr = 37 μ C/cm2, at 2 V]. Results of 40 nm PZT using IrTiOx/IrTi electrode is possibly given a challengeable clue for high-density FRAM.
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