Abstract
ABSTRACTThe formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)Si on poly-Si lines with linewidths ranging from 0.5 gtm to 0.25 μm has been monitored by a distinct Raman peak at around 215 cm−1. Ni(Pt)Si was clearly identified to be present up to a RTA temperature of 900°C on narrow poly-Si lines as compared to pure NiSi which was found only up to 750°C. Raman scattering from the 100×100 μm2 poly-Si pads showed the formation of NiSi2 at 750°C for pure Ni-salicidation and 900°C for Ni(Pt)-salicidation respectively. The difference in the stability of NiSi on the poly-Si pads and lines is discussed in terms of agglomeration, inversion and/or nucleation of NiSi2that could be due to difference in nucleation sites and/or stress. In addition, a correlation between the line sheet resistance and the presence of Ni silicide was found using micro-Raman mapping along single poly-Si lines.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
