Abstract
In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss characterization were carried out by using a 1.3 μm light from a thermally tunable laser. Transmission through the device was recorded as a function of wavelength. Loss coefficient is found to be wavelength and bias voltage dependent.
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