Abstract
We controlled morphologies of F-doped SnO2 (FTO) thin films via an electrochemical method. To obtain rough and porous surface of the FTO thin films, a potentiostat/galvanostat was used. Field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were employed to demonstrate the morphological changes of FTO surface. The electrical and optical properties of the FTO thin films were analyzed using Hall effect measurement system and UV-vis spectrophotometry. Also, morphology controlled the FTO thin films would be applied to dye-sensitized solar cells.
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