Abstract
The homoepitaxial growth of CdTe films on CdTe(110) substrates was studied by reflection high-energy electron diffraction (RHEED) and synchrotron radiation photoemission spectroscopy. Deposition of 50 to 100 monolayer thick CdTe films at room temperature and subsequent annealing to 350 °C produced high structural quality surfaces. The RHEED pattern was well defined with sharp streaks and distinctly visible Kikuchi lines. The valence-band photoemission spectra developed sharp features characteristic for direct transitions from a highly ordered surface. We obtained similar high structural quality for the homoepitaxial growth of CdTe on a substrate held at 250 °C. The evolution of the RHEED pattern, the Cd 4d core level emission, and the Fermi level pinning position for growth temperatures ranging from 25 to 350 °C provide detailed information about homoepitaxial growth characteristics. We discuss the appearance of these spectral features in terms of the structural properties of the CdTe(110) surface.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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