Abstract
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure (NEXAFS) around NK edge. Interstitial molecular nitrogen N2 has been formed in all of the samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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