Characterization of metal–oxide–semiconductor capacitors, fabricated on (111) β-SiC epilayers grown on (111) TiC

Abstract

Metal–oxide–semiconductor (MOS) capacitors, fabricated on two n-type and one p-type (111) β-SiC epilayers, were characterized by C–V measurements. The β-SiC epilayers were grown on (111) bulk TiC substrates, by pyrolysis of disilylethane. Inversion, in the dark, was obtained in MOS capacitor structures on both n-type epilayers; demonstrating the feasibility of inversion mode MOS field effect transistors in β-SiC grown on TiC. The Terman method was used to estimate the interface trap density (Dit) at between 2×1011 cm−2 eV−1 and 1.4×1012 cm−2 eV−1; where Dit increased with carrier concentration.