Abstract
Diffuse x-ray scattering technique was applied to characterize the surface of a (111) silicon wafer polished mechanochemically. Extra diffuse scattering, which is considered to be attributable to localized strain fields, was detected. The localized lattice distortions were of similar characteristics to those found in a (111) surface lapped with white alundum (No. 2000) and etched by 30∼60 μm [S. Yasuami and J. Harada, J. Appl. Phys. 52, 3989 (1981)]. The thickness of the damaged layer induced by mechanochemical polishing was only about 15 μm, however, which is much smaller than that obtained by lapping (about 100 μm). This is the first observation of the damage left in a mechanochemically polished (111) silicon surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
