Abstract
The preparation and properties of grown p-n homojunction In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</inf> As photodiodes for operation in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-1.7 \mu</tex> m wavelength range are described. At a reverse bias of 20 V, these diodes exhibit generation-recombination limited dark current as low as <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2 \times 10^{-9}</tex> A, junction capacitance of 0.3 pF, and pulse response corresponding to a circuit-limited rise time of 60 ps and diffusion-limited full width (FWHM) of 140 ps.
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