Abstract
High concentrations (3–5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 °C). Subsequent annealing at 700 °C produced apparent ferromagnetic behavior up to ∼250 K for the 3 at. % sample. Selected area diffraction patterns did not reveal the presence of any other phases in the Fe-implanted region. The direct implantation process appears promising for examining the properties of magnetic semiconductors with application to magnetotransport and magneto-optical devices.
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