Abstract
A new technique is presented to directly measure strains at the nanometer scale from HREM images of heteroepitaxial semiconductor systems. This approach involves the analysis of the cumulative sums of deviations in lattice-fringe spacing from a target value. A brief discussion of the technique is given and applications to a simulated bilayer system as well as to an experimental image of a semiconductor superlattice are presented. The CUSUM technique accurately reproduced the strain profiles in the systems investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
