Abstract
CdZnTe crystals for the preparation of X-ray imaging detectors have been grown by the boron oxide encapsulated vertical Bridgman method. The homogeneity of the crystals has been studied by photoluminescence mapping, energy-dispersive X-ray analysis, and resistivity mapping. The zinc distribution follows an anomalous behavior that deviates from the normal freezing equation. The wafers cut perpendicular to the growth direction show a homogeneous resistivity distribution, suggesting the possible exploitation of these crystals for the production of large volume imaging detectors.
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