Abstract
Here, we investigate the dislocations in β-Ga2O3 single crystals grown by edge-defined film-fed growth (EFG) and halide vapor-phase epitaxy (HVPE) using synchrotron X-ray topography. The (001)- and ()-oriented crystals grown in the [010] direction by EFG exhibited dislocations along the 〈010〉 direction with some dislocations oriented in a line; in addition, wandering dislocations were observed on the (001) surface. Based on the invisibility criterion, the Burgers vector of some dislocations was determined to be 〈010〉. On the other hand, in the (001) film grown by HVPE over the EFG substrate, threading dislocations propagating in the [001] direction were observed. Furthermore, it was found that the dislocations on the substrate grown by EFG were inherited by the film formed by HVPE: a dislocation was generated in the film grown by HVPE at both ends of the void defects in the substrate grown by EFG.
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