Abstract
Boron doped diamond films grown by chemical vapor deposition on silicon (1 1 1) were measured by Raman spectroscopy and X-ray diffractometry to investigate the crystallographic direction and the lattice parameters of both the βSiC and diamond films with different levels of dopant. It was observed that the level of dopant has a significant influence on the lattice parameters for a boron/carbon ratio of 20 000 ppm, and also that the expansion of the lattice parameters was due to compressive thermal stress of diamond films.
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