Abstract
Damage tests are carried out at 1064nm to measure the laser resistance of TiO(2)/Al(2)O(3) and HfO(2)/Al(2)O(3) antireflection coatings grown by atomic layer deposition (ALD). The damage results are determined by S-on-1 and R-on-1 tests. Interestingly, the damage performance of ALD coatings is similar to those grown by conventional e-beam evaporation process. A decline law of damage resistance under multiple irradiations is revealed. The influence of growth temperature on damage performance has been investigated. Result shows that the crystallization of TiO(2) layer at higher temperature could lead to numerous absorption defects that reduce the laser-induced damage threshold (LIDT). In addition, it has been found that using inorganic compound instead of organic compound as precursors for ALD process maybe effectively prevent carbon impurities in films and will increase the LIDT obviously.
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