Abstract
A series of ZnO 1− x S x alloy films (0 ≤ x ≤ 1) were grown on quartz substrates by radio-frequency (rf) magnetron sputtering of ZnS ceramic target, using oxygen and argon as working gas. X-ray diffraction measurement shows that the ZnO 1− x S x films have wurtzite structure with (0 0 2) preferential orientation in O-rich side (0 ≤ x ≤ 0.23) and zinc blende structure with (1 1 1) preferential orientation in S-rich side (0.77 ≤ x ≤ 1). However, when the S content is in the range of 0.23 < x < 0.77, the ZnO 1− x S x film consists of two phases of wurtzite and zinc blende or amorphous ZnO 1− x S x phase. The band gap energy of the films shows non-linear dependence on the S content, with an optical bowing parameter of about 2.9 eV. The photoluminescence (PL) measurement reveals that the PL spectrum of the wurtzite ZnO 1− x S x is dominated by visible band and its PL intensity and intensity ratio of UV to visible band decrease greatly compared with undoped ZnO. All as-grown ZnO 1− x S x films behave insulating, but show n-type conductivity for w-ZnO 1− x S x and maintain insulating properties for β-ZnO 1− x S x after annealed. Mechanisms of effects of S on optical and electrical properties of the ZnO 1− x S x alloy are discussed in the present work.
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