Abstract
AbstractCharacterization of on‐wafer vias using a 0.18‐μm RF CMOS technology is presented. Equivalent resistance and inductance of a single via and multiple vias with different physical arrangements are extracted from full wave simulations up to 30 GHz. An equivalent circuit model with frequency‐independent components is proposed to model the frequency‐dependent characteristics of the vias. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 713–715, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23173
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