Abstract
We present a detailed study of the process influence on two-dimensional electron gas (2DEG) transport properties in Al0.25Ga0.75N/AlN/GaN heterostructure. Hall effect measurements are used to analyze the conduction in normally on devices demonstrating the formation of a second channel at the Al2O3/AlGaN interface for high biases. Electrical characterization is performed on a large set of devices for temperatures ranging from 25 °C to 250 °C, and 2DEG mobility is extracted using split C-V measurement technique. Various technological splits were experimentally tested and the corresponding mobility characteristics were modeled using the Kubo-Greenwood formula in order to determine the dominant scattering phenomenon limiting the 2DEG mobility.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
