Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs

Abstract

This paper presents a generic and complete process to characterize and model the newly developed silicon carbide (SiC) MOSFET. The static characteristics, including MOSFET I-V curves, body diode, nonlinear junction capacitances, as well as package stray inductances, have been fully characterized on a prototype 1.2 kV, 20 A SiC MOSFET under varying temperature from 25 °C to 200 °C. Characteristics particular to the SiC MOSFET and its advantages over the silicon counterparts are analyzed and explained. The switching performance of the device, on the other hand, has also been tested under room temperature using a specially designed double-pulse tester with minimized circuit parasitics. The characterization results are then used to build a SiC MOSFET model using the MOSFET modeling tool in Synopsys Saber. Finally, discussions are presented on how to improve the model accuracy in its switching behavior by obtaining static characteristics from switching waveforms.