Characterization and Modeling of 10-kV Silicon Carbide Modules for Naval Applications

Abstract

This paper presents a detailed characterization and modeling effort applied to a set of 10-kV SiC MOSFET modules, which have not been exhaustively described in the literature to date. This paper builds on a previous effort by the authors, in which an empirical performance evaluation was performed using a reduced-scale variant of the medium-voltage direct current (MVDC)-rated SiC MOSFET module. In this paper, full-scale module samples are used, which are capable of continuous operation at 120 A. Thus, the evaluation provided here offers improved relevance to the category of full-scale MVDC applications of which future naval shipboard power systems are expected to be a part. The evaluation effort described here considers both the static and dynamic performances of the considered 10-kV SiC MOSFET module, along with the identification of integration considerations that will be of use to designers of future applications based on this technology. Specific contributions of this paper that belong to this category include the presentation of a custom gate-drive circuit designed to operate the modules under consideration and the presentation of a detailed behavioral simulation model created to predict the performance of the same. The output of this model is compared with experimental waveforms captured during pulsed switching experiments at a bus voltage of 2 kV and a load current of 100 A. The simulation output is demonstrated to offer good agreement with the experimental waveforms during both turn-on and turn-off transitions. The availability of such a model is important because it makes possible the execution of a wide range of feasibility and trade studies for future applications by researchers without physical access to this technology.