Characterization and control of surfaces and interfaces for III–V nanoelectronics

Abstract

Recent progress and issues of characterization and control of surfaces and interfaces as related to III–V nanoelectronics are reviewed. After a brief general review of III–V nanotechnology, a novel hexagonal binary decision diagram (BDD) quantum logic circuit approach is introduced where hexagonal nanowire networks are controlled by nanoscale Schottky gates. For controlled formation of high-density nanostruc-tures, selective molecular beam epitaxy growth is described together with a brief description of a cathodoluminescence-based characterization of buried heterointerfaces. As the key processing issue, problems associated with nanostructure surfaces and Schottky gates are discussed, introducing a recent scanned probe study and attempts to remove Fermi level pinning by a silicon interface control layer.