Abstract
High-quality TiO 2 films were grown at 250°C by plasma-enhanced atomic layer deposition (ALD) with a mixture of O 2 and N 2 plasma for the first time. The films exhibited an improved uniformity of within ′3%, a reliable growth rate of 0.042 nm/cycle, and improved electrical properties, including dielectric constant and leakage current compared to those prepared by conventional ALD. In particular, the plasma process enhanced the rate of adsorption of precursors during the initial growth stage by generating new active functional groups and the surface roughening was suppressed.
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