Abstract
The etching characteristics of GaN films prepared by several different methods were investigated. The polarity of all the GaN samples was first determined by coaxial impact collision ion scattering spectroscopy (CAICISS). From the relationship between the etching characteristics and the polarity it is confirmed that selective etching in KOH solution is consistent with the polarity rather than either the deposition method or the surface morphology. These etching characteristics are related to the polarity of the surface.
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