Characteristics of SiO xN y films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH 3/O 2/Ar for water vapor diffusion barrier

Abstract

SiO x N y thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) using hexamethyldisilazane (HMDS, 99.9%)/NH 3/O 2/Ar at a low temperature, and examined for use as a water vapor diffusion barrier. The film characteristics were investigated as a function of the O 2:NH 3 ratio. An increase in the O 2:NH 3 ratio decreased the level of impurities such as –CH x , N–H in the film through a reaction with oxygen. Thereby, a more transparent and harder film was obtained. In addition, an increase in the O 2:NH 3 ratio decreased the nitrogen content in the film resulting in a more SiO 2-like SiO x N y film. Using SiO x N y fabricated with an O 2:NH 3 ratio of 1:1, a multilayer thin film consisting of multiple layers of SiO x N y /parylene layers was formed on a polyethersulfone (PES, 200 μm) substrate, and its water vapor transmittance rate (WVTR) was investigated. A WVTR < 0.005 g/(m 2 day) applicable to organic thin film transistors or organic light emitting diodes was obtained using a multilayer composed of SiO x N y (260 nm)/parylene (< 1.2 μm) on the PES.