Abstract
Fundamental characteristics of silicon inversion layer (IL) solar cells using SiO/Si as an active region and Mg/SiO2/Si as an MIS junction are studied. Methods to estimate the degree of inversion at the Si surface of the cells are established. The degree of inversion gives significant effects on energy conversion efficiency. The optimum preparation condition of the SiO film which makes inversion at the Si surface is investigated to make inversion stronger. In order to decrease the sheet resistance and to optimize the thickness of the insulator for MIS junctions, effects of thermal oxidation of the Si surface is studied. Photovoltaic properties of the Si IL solar cells with different resistivities are measured. The AM 1 efficiency of 13.5% was obtained.
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