Abstract
ABSTRACTTransport, Raman and XPS measurements were made on SI-implanted (1.7×1013cm−2, 50keV) and rapid-thermal annealed (100) and (211) GaAs substrates In an effort to distinguish differences between the two orientations. With these techniques, no significant differences were found. The implant-damage depth was about 1200Å for both orientations, with slightly higher near-surface damage (and lower mobility) apparent for (211). No unusual features in the (211) carrier concentration profile, as was previously reported, were evident.
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