Abstract
The characteristics of nitrogen-doped GaAsP light-emitting diodes grown by hydride vapor-phase epitaxy are described. The light output, forward voltage and degradation to provide the performance required, are investigated as functions of the structural parameters of the GaAsP layers. The parameters studied are the carrier concentrations in the nitrogen-doped and middle GaAsP layers, and the total thickness of the GaAsP layer. The GaAsP layer consists of nitrogen-doped and middle layers. The characteristics are discussed using the electroluminescence emission decay time, electroluminescent spectrum and aging test result. The effects of total thickness on the characteristics are discussed with the aid of calculations of stress. The study confirms that the characteristics depend systematically on the parameters and that nitrogen-doped and middle layers play important roles in the diode performance.
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