Abstract
An oxide-confined multileaf holey light-emitting diode (LED) in the 780 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a multileaf holey structure within the p-ohmic contact ring for light extraction. The spontaneous emission from under the etched holes and internally reflected lights can be extracted and collimated out of the smaller etched leaf holes. High-resolution imaging studies indicate that the device emits with smaller beams mainly through the multileaf etched holes made it suitable for fiber-optic communications.
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