Abstract
In this paper, we report on the characteristics of GaN films grown on Si(111) at a low temperature (200 °C) by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD). Structural analysis of the GaN films was performed by using scanning electron microscopy (SEM), atomic force miscroscopy (AFM), X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), and Rutherford backscattering spectrometry (RBS) . Post deposition analysis revealed high quality crystalline GaN was obtained at this low temperature. Electrical analysis of the GaN films was done by using current–voltage ( I– V) measurements where electrical characterizations were carried on GaN/Si heterojunction and Schottky barrier diodes. Rectification behaviour was observed for the isotype GaN/Si (n–n) heterojunction. Ideality factors and Schottky barrier heights for Ni and Cr Schottky barriers on GaN, were deduced to be 1.4 and 1.7; and 0.62 and 0.64 eV, respectively.
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