Abstract
AbstractThis paper deals with the characteristics of ion‐beam‐synthesized tantalum silicide film on different substrates as a function of annealing conditions. An implantation of 2 × 1017 40 kV Ta ions cm−2 was performed using an ion implanter of metal vapour vacuum arc. Silicon wafers of <100> and <111> orientation were chosen as representatives of different substrates. Rapid thermal annealing conditions included annealing temperatures of 550–1000 °C and annealing times of 5–90 s. Annealing‐induced variations in microstructure, composition, resistivity and diffusion in the tantalum silicide film were analysed by means of x‐ray diffractometry, Rutherford backscattering spectrometry, resistometry and secondary ion mass spectrometry, respectively, in order to compare the as‐implanted and as‐annealed specimens. The results revealed that tantalum silicide film possesses the most optimum properties when annealed at 850 °C for 30 s in both the <100> and <111> specimens. Copyright © 2005 John Wiley & Sons, Ltd.
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