Abstract
Electrons are emitted from the cross-sectional surface of a porous Si layer. The measurement of electron emission from the cross-sectional surface of the porous Si layer on a glass substrate by applying positive and negative DC voltage and AC voltage is demonstrated. The electron emission device is formed of a layered structure composed of a Au electrode, a porous Si layer with a cross-sectional surface, and a glass substrate with an Al electrode. The threshold voltage of electron emission changed with the variation of the thickness of the porous Si layer, and also changed with the polarity of the applied voltage and the conductive type of Si in the original porous silicon layer. Measurement of the electron emission from the cross-sectional surface of the porous Si layer has been demonstrated with an applied AC voltage. Electron emission occurred at the positive or negative peak of the AC voltage higher than the threshold voltage.
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