Abstract
Nominally undoped p-type GaAs has been grown by gas source molecular beam epitaxy (GSMBE) using triethygallium and arsine. The temperature dependence of carbon incorporation has been investigated. It has been found that there exists an optimum growth temperature (Tg) of about 550 ° C, at which the lowest carbon incorporation and the highest Hall mobility are attained. At Tg higher than 550 ° C with a V/III ratio of 5, the carrier concentration exhibits an Arrhenius type dependence on Tg with an activation energy of 2.2 eV. In contrast, when Tg is lower than 550 ° C, the carrier concentration increases with decreasing Tg. Defect induced bound exciton peaks have been observed in the photoluminescence spectra except for the sample grown at the optimum growth temperature. A qualitative model to explain the characteristics of carbon incorporation will be discussed.
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