Abstract
Switching devices with InGaAsGaAs quantum-well structures have been fabricated and studied. The InGaAsGaAs quantum wells in which delta-doped (δ-doped) sheets were inserted produced potential wells for carrier confinement. Due to the potential redistribution, the interesting single and double negative-differential-resistance (NDR) phenomena were observed in the current-voltage ( I- V) characteristics of these devices. The property of a bulk-barrier structure, which was employed in the studied switching devices, is also investigated. The experimental results show that the temperature variation provides a significant influence on the device performance.
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