Abstract
The aim of this research work is to analyze the surface characteristics of an improved AlGaN/GaN HEMT biosensor. The investigation leads to analyze the transistor performance to detect human MIG with the help of an analytical model and measured data. The surface engineering includes the effects of repeatability, influence of the substrate, threshold shifting, and floating gate configuration. A numerical method is developed using the charge-control model and the results are used to observe the changes in the device channel at the quantum level. A Self-Assembled Monolayer (SAM) is formed at the gate electrode to allow immobilization and reliable cross-linking between the surface of the gate electrode and the antibody. The amperometric detection is realized solely by varying surface charges induced by the biomolecule through capacitive coupling. The equivalent DC bias is 6.99436 × 10-20 V which is represented by the total number of charges in the MIG sample. The steady state current of the clean device is 66.89 mA. The effect of creation and immobilization of the protein on the SAM layer increases the current by 80 - 150 μA which ensures that successful induction of electrons is exhibited.
Highlights
Over the past several years, there has been much research into developing newer and less invasive ways to monitor and detect several different biological cells and molecules [1]-[6]
The knee voltages of about 0.2 - 0.4 V are observed throughout the multiple devices of the same type
It is known that current collapse phenomenon occurs in AlGaN HEMT devices under AC and pulsed conditions [37]-[41]
Summary
Over the past several years, there has been much research into developing newer and less invasive ways to monitor and detect several different biological cells and molecules [1]-[6] Such biological elements include but not limited to proteins, enzymes, antibodies, and tissue cells. AlGaN/ GaN based HEMT devices have become very attractive in the world of biological modified field effect transistors (BioFETS/biosensing) due to their thermal stability, highsensitivity, and label-free/real time detection. They exhibit chemical inertness to extreme sensing environments [1]-[6]. The unique ability of GaN material is to exhibit spontaneous and piezoelectric polarization (~1200 - 1500 cm2/V-S) in heterojunctions without any need for material doping [8]-[10]
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