Abstract
Today, there is an increasing demand for high frequency, high power and high temperature applications where the converters will operate in a harsh environment. Switching devices based on Silicon Carbide (SiC) offer a significant performance improvement on the switch level compared with Si devices. This paper describes the current state of the art in SiC devices briefly. Then the research and development of applying SiC devices in military and industrial applications are given respectively. And challenges regarding broader implementation of SiC devices today are emphasized. Finally, a short outlook into the future for upcoming SiC power devices is given.
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