Abstract
Photomodulated reflectance (PR) is a straightforward technique in which the semiconductor's reflectivity is perturbed by a chopped laser beam. In contrast to photo-luminescence, PR spectra are replete with sharp, detailed derivative-like features from ground-state, and other higher-energy transitions, from which can be extracted material parameters crucial to device operation, such as compositions, layer thicknesses, built-in electric fields and band line-ups. Since samples need no special mounting, can be studied in air at 300K, and can be full-sized prefabrication wafers, PR is truly non-destructive. We discuss the advances in the application and interpretation of PR spectra of vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes, which are difficult to characterise using the more conventional non-destructive techniques.
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