Abstract
Abstract The lattice mismatched MOVPE growth of In 0.82 Ga 0.18 As and InAs 0.61 P 0.39 is described. A study of the influence of the InGaAs growth temperature results in an optimum around 590°C. Also the influence of the buffer layer on the material quality (X-ray FWHM) is reported. Since these materials are intended for the fabrication of photodetectors in the 2.4 μm region, also the etch behaviour and Zn diffusion (inside MOVPE reactor) are reported.
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