Abstract
Liquid phase diffusion (LPD) is a solution growth technique within the family of directional solidification. This chapter presents the numerical simulations carried out for LPD growth of SixGe1-x crystals with and without the application of applied magnetic fields. In the models, the application of a static vertical magnetic field was considered to suppress the strong convection observed in the solution in the first few hours of the LPD growth process, and a horizontal rotating magnetic field to obtain a uniform mixing and a flatter growth interface. The Si–Ge system is selected because of the increasing technological interest in the improved device performance attainable with this material. Maximum available furnace operating temperatures in the crystal growth laboratory compels the confinement of research to the high Ge content end of the Si–Ge phase diagram, but the principle may be extended by use of higher operating temperature furnaces.
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