Abstract
The chapter reviews the electrical performance of basic structures such as MOS capacitors and pn diodes, which gives an insight in the performance parameters and a better understanding of the basic mechanisms involved. A good control of the performance of these building blocks is essential for optimizing the transistor performance. The chapter explains some basic measurement techniques. In this chapter, the two major building blocks of the Ge-based MOSFET (metal-oxide-semiconductor field-effect transistor) are reviewed––namely, the p-n junction and the Ge/insulator/metal gate stack. The chapter also outlines the basic principles of operation of these devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
