Abstract
The structure and morphology of Sb-covered Ge(001) surfaces has been studied with scanning tunneling microscopy and low-energy electron diffraction. After deposition of submonolayers of Sb at room temperature and annealing at 350°C, the images show an interfacial mixing of symmetrical Sb dimers and Ge dimers. At saturation coverage, the (2 × 1) reconstruction exhibits a high density of antiphase domain boundaries. Upon annealing at temperatures between 480 and 510°C the morphology of the surface changes drastically without Sb desorption. Oriented two-dimensional islands and vacancies are formed which have distinctive shapes. The rearrangements which occur on the surface can be understood in terms of stress domains, which reduce the surface stress.
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