Abstract
The temperature dependences of structural and phase transformations in quartz successively implanted by zinc and fluorine during annealing in nitrogen have been studied. Plates were doped with 64Zn+ ions to a dose of 5 × 1016 cm–2 with an energy of 50 keV and then with 19F+ ions to the same dose but with an energy of 17 keV. After the implantation, individual Zn-containing particles about 100 nm in size were found on the sample surface. These particles decrease in size during annealing (by an order of magnitude after annealing at 800°C). The implantation leads to the formation of radiation-induced point defects and their clusters in the quartz bulk. Radiation-induced defects are gradually annealed during the heat treatment, and the phase of metallic zinc is transformed first to its zinc oxide (ZnO) at 600°C and then to willemite (Zn2SiO4) at 800°C.
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