Abstract
The electrochemical response of thin Pt films on Si was studied at different stages of mixing between Pt and Si, from fully segregated to fully mixed. This phase change was induced by subjecting the films to helium ion bombardment at energies in the range of 30 keV. The formation of a PtxSi phase was confirmed by XPS measurements. As the bombardment dose increases, the voltammogram peaks characteristic of bulk platinum eventually disappear, giving way to the practically featureless voltammogram of electrocatalytically inactive platinum silicide.
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