Abstract
The regularities of changes in the ellipsometric parameters (EPs) of Si(111) single crystals upon the removal of adsorbed gases and a natural oxide layer from their surfaces are investigated. The surfaces were cleaned by sequentially increasing the annealing temperature of single crystals in a high vacuum. The existence of irreversible and reversible changes in EPs is observed with an increase in the annealing temperature of single crystals and in the range of temperatures that do not exceed the temperature of the performed annealing, respectively. The boundaries of three regions of the temperature range of single-crystal annealing within which the EP △ increases proportionally to the temperature of the performed annealing are determined.
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