Abstract
The semiconductor nanoparticles have recently attracted a lot of attention due to the possibility of their application in various devices. In the present paper, nanoparticles of Zinc oxide are prepared by precipitation method using two different (EDTA and DNA) capping agents to control the agglomeration. XRD and SEM technique was used for structural characterization. For the study of dielectric properties, complex permittivity (ε′ and ε″) and loss tangent (tan δ) with frequency is analyzed with frequency and temperature. The Dispersion parameters are calculated using Cole-Cole analysis and the results are compared.
Highlights
IntroductionResearch in semiconducting nanoparticles is one of the most investigated subjects, due to their wide field of applications
Research in semiconducting nanoparticles is one of the most investigated subjects, due to their wide field of applications.The novel properties of nanomaterials depend on their size, structure and shape
In this paper zinc oxide nanoparticles were synthesized using two capping agents and their dielectric properties were studied by varying frequency and temperature
Summary
Research in semiconducting nanoparticles is one of the most investigated subjects, due to their wide field of applications. In this paper zinc oxide nanoparticles were synthesized using two capping agents and their dielectric properties were studied by varying frequency and temperature. We used aqueous solutions of DNA powder and EDTA as capping agent to control the particle size. The sample Z is prepared using EDTA as capping agent and sample ZD using DNA solution to prevent agglomeration. For both samples 0.1 M solution of Zinc. At low frequencies dielectric constant is found to be too high and it decreases exponentially with increase in frequency At all frequencies the dielectric constant is found to be high at room temperature and is found to decrease when temperature increased and at high temperature the value of dielectric constant was found to be almost a constant
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